FDMD8900 datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

Q1: N−Channel
* Max rDS(on) = 4 mW at VGS = 10 V, ID = 19 A
* Max rDS(on) = 5 mW at VGS = 4.5 V, ID = 17 A
* Max rDS(on) = 6.5 mW at VGS = 3.8 V, ID = 15 A

Application

* Computing
* Buck, Boost and Buck/Boost Applications
* General Purpose POL www.onsemi.com D1 1 D1 2 D1 3 .

Description

This devices utilizes two optimized N−ch FETs in a dual 3.3 x 5 mm thermally enhanced power package. The HS Source and LS drain are internally connected providing a low source inductance package, helping to provide the best FOM. Features Q1: N−Channe.

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